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IPW60R070CFD7

INCHANGE
Part Number IPW60R070CFD7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R070CFD7 IIPW60R070CFD7 ·FEATURES ·Static drain-source on-...
Datasheet PDF File IPW60R070CFD7 PDF File

IPW60R070CFD7
IPW60R070CFD7

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R070CFD7 IIPW60R070CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 129 PD Total Dissipation @TC=25℃ 156 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-t...


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