N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW60R080P7 IIPW60R080P7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤80mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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