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IRF3709

Part Number	IRF3709
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 3, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3709， IIRF3709 ·FEATURES ·Low drain-source on-resistance: RD...
Datasheet	IRF3709 PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3709， IIRF3709 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤9.
0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 360 PD Total Dissipation @TC=25℃ 120 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHA...

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