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IRL40B212

Part Number	IRL40B212
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 3, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL40B212，IIRL40B212 ·FEATURES ·Static drain-source on-resistan...
Datasheet	IRL40B212 PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL40B212，IIRL40B212 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.
9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 990 PD Total Dissipation @TC=25℃ 231 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THER...

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