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TK3A90E

Toshiba
Part Number TK3A90E
Manufacturer Toshiba
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK3A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK3A90E PDF File

TK3A90E
TK3A90E

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK3A90E 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance : RDS(ON) = 3.
7 Ω (typ.
) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.
5 to 4.
0 V (VDS = 10 V, ID = 0.
25 mA) 3.
Packaging and Internal Circuit TK3A90E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed)...


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