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TK4A80E
N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS (π-MOS) TK4A80E 1. Applications Switching Voltage
Regulator
s 2. Features (1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK4A80E 1 : Gate 2 : Drain 3 : ...
Toshiba
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