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TK10E60W

INCHANGE
Part Number TK10E60W
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10E60W，ITK10E60W ·FEATURES ·Low drain-source on-resistance: R...
Datasheet PDF File TK10E60W PDF File

TK10E60W
TK10E60W

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10E60W，ITK10E60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.
38Ω.
·Enhancement mode: Vth =2.
7 to 3.
7V (VDS = 10 V, ID=0.
5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 9.
7 IDM Drain Current-Single Pulsed 38.
8 PD Total Dissipation @TC=25℃ 100 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTE...


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