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FCPF099N65S3

ON Semiconductor
Part Number FCPF099N65S3
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Oct 5, 2020
Detailed Description FCPF099N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description SUPERFET III MOSFET is O...
Datasheet PDF File FCPF099N65S3 PDF File

FCPF099N65S3
FCPF099N65S3

Overview
FCPF099N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features • 700 V @ TJ = 150°C • Typ.
RDS(on) = 85 mW • Ultra Low Gate Charge (Typ.
Qg = 57 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 517 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar www.
onsemi.
com VDSS 650 V RDS(ON) MAX 99 mW @ 10 V ID MAX 30 A D G S POWER MOSFET GD S TO−220F CASE 221AT MARKING DIAGRAM $Y&Z&3&K FCPF 099N65S3 © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev.
4 $Y &Z &3 &K FCPF099N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FCPF099N65S3/D FCPF099N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage − DC − AC (f > 1 Hz) 650 V ±30 V ±30 ID Drain Current − Continuous (TC = 25°C) 30* − Continuous (TC = 100°C) 19* IDM Drain Current − Pulsed (Note 1) 75* EAS Single Pulsed Avalanche Energy (Note 2) 145 IAS Avalanche Current (Note 2) 4.
4 EAR Repetitive Avalanche Energy (Note 1) 0.
43 dv/dt MOSFET dv/dt 100 A A mJ A mJ V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) − Derate Above 25...


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