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FDP2D3N10C

ON Semiconductor
Part Number FDP2D3N10C
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Oct 5, 2020
Detailed Description MOSFET – N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General Description This N−C...
Datasheet PDF File FDP2D3N10C PDF File

FDP2D3N10C
FDP2D3N10C

Overview
MOSFET – N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.
3 mW FDP2D3N10C, FDPF2D3N10C General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.
This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode.
Features • Max rDS(on) = 2.
3 mW at VGS = 10 V, ID = 100 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIL Tested • RoHS Compliant Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter DATA SHEET www.
onsemi.
com VDS ...


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