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IPP050N06N

Infineon
Part Number IPP050N06N
Manufacturer Infineon
Description Power-Transistor
Published Oct 5, 2020
Detailed Description OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - nor...
Datasheet PDF File IPP050N06N PDF File

IPP050N06N
IPP050N06N

Overview
OptiMOS® Power-Transistor Features • For fast switching converters and sync.
rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant IPP050N06N G IPB050N06N G Product Summary V DS R DS(on),max SMDversion ID 60 V 4.
7 m: 100 A Type IPP050N06N IPB050N06N Package Marking PG-TO220-3 050N06N PG-TO263-3 050N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T C=25 °C1) T C=100 °C T C=25 °C2) Avalanche energy, single pulse E AS I D=100 A, R GS=25 : Reverse diode dv /dt dv /dt I D=100 A, V DS=48 V, di /dt =200 A/μs, T j,max=175 °C Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1) Current is limited by bondwire; with an RthJC=0.
5 the chip is able to carry 160A 2) See figure 3 Rev.
1.
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