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IPP054NE8N

Infineon
Part Number IPP054NE8N
Manufacturer Infineon
Description Power-Transistor
Published Oct 5, 2020
Detailed Description IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate c...
Datasheet PDF File IPP054NE8N PDF File

IPP054NE8N
IPP054NE8N

Overview
IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.
1 mΩ 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB051NE8N G IPI05CNE8N G IPP054NE8N G Package Marking PG-TO263-3 051NE8N PG-TO262-3 05CNE8N PG-TO220-3 054NE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=100 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage 4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 100 100 400 826 6 ±20 300 -55 .
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175 55/175/56 Unit A mJ kV/µs V W °C Rev.
1.
2 page 1 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, R thJA minimal footprint - junction - ambient 6 cm2 cooling area5) - - 0.
5 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V (BR)DSS V GS=0 V, I D=1 mA 85 V GS(th) V DS=V GS, I D=250 µA 2 I DSS V DS=68 V, V GS=0 V, T j=25 °C - V DS=68 V, V GS=0 V, T j=125 °C - I GSS V GS=20 V, V DS=0 V - R DS(on) V GS=10 V, I D=100 A, TO220, TO262 ...


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