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IPB60R380P6

INCHANGE
Part Number IPB60R380P6
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 5, 2020
Detailed Description Isc N-Channel MOSFET Transistor IPB60R380P6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate char...
Datasheet PDF File IPB60R380P6 PDF File

IPB60R380P6
IPB60R380P6

Overview
Isc N-Channel MOSFET Transistor IPB60R380P6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10.
6 6.
7 29 PD Total Dissipation @TC=25℃ 83 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c)...


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