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IRF3808S

Part Number	IRF3808S
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 6, 2020
Detailed Description	Isc N-Channel MOSFET Transistor IRF3808S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ...
Datasheet	IRF3808S PDF File

Overview

Isc N-Channel MOSFET Transistor IRF3808S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 106 75 550 PD Total Dissipation @TC=25℃ 200 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Cha...

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