DatasheetsPDF.com

IRFS5615

Part Number	IRFS5615
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 6, 2020
Detailed Description	Isc N-Channel MOSFET Transistor IRFS5615 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ...
Datasheet	IRFS5615 PDF File

Overview

Isc N-Channel MOSFET Transistor IRFS5615 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 33 24 140 PD Total Dissipation @TC=25℃ 144 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Cha...

Similar Datasheet

IRFS5615 N-Channel MOSFET - INCHANGE
IRFS5615PbF Digital Audio MOSFET - International Rectifier
IRFS5620PbF Digital Audio MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)