N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.85Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM ...
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