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FMV20N60S1

INCHANGE
Part Number FMV20N60S1
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Low on-resistance: RDS(on) ≤ 0.19Ω (max) ·Low switching loss ·100% avalanche...
Datasheet PDF File FMV20N60S1 PDF File

FMV20N60S1
FMV20N60S1

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Low on-resistance: RDS(on) ≤ 0.
19Ω (max) ·Low switching loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·UPS (Uninterruptible Power Supply) ·Power conditioner system ·Power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 53 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-t...


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