N-Channel MOSFET
Description
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.65Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE ...
Similar Datasheet