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IPA60R125P6

Part Number	IPA60R125P6
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6 ·FEATURES ·Drain-source on-resistance: RDS(on) ≤0.125Ω (max) ·...
Datasheet	IPA60R125P6 PDF File

Overview

isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6 ·FEATURES ·Drain-source on-resistance: RDS(on) ≤0.
125Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·It is intended for general purpose switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 87 PD Total Dissipation @TC=25℃ 34 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS S...

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