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IPD050N03L

INCHANGE
Part Number IPD050N03L
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enha...
Datasheet PDF File IPD050N03L PDF File

IPD050N03L
IPD050N03L

Overview
isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 68 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j...


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