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IPD60R2K0C6

INCHANGE
Part Number IPD60R2K0C6
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enha...
Datasheet PDF File IPD60R2K0C6 PDF File

IPD60R2K0C6
IPD60R2K0C6

Overview
isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 2.
4 IDM Drain Current-Single Pulsed 6 PD Total Dissipation @TC=25℃ 22.
3 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth...


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