N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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