DatasheetsPDF.com

IPD60R460CE

INCHANGE
Part Number IPD60R460CE
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.46Ω ·E...
Datasheet PDF File IPD60R460CE PDF File

IPD60R460CE
IPD60R460CE

Overview
isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
46Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13.
1 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 102 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)