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IPD65R1K0CE

INCHANGE
Part Number IPD65R1K0CE
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enha...
Datasheet PDF File IPD65R1K0CE PDF File

IPD65R1K0CE
IPD65R1K0CE

Overview
isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.
2 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 68 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channe...


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