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IPD90R1K2C3

INCHANGE
Part Number IPD90R1K2C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.2Ω ·En...
Datasheet PDF File IPD90R1K2C3 PDF File

IPD90R1K2C3
IPD90R1K2C3

Overview
isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.
2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5.
1 IDM Drain Current-Single Pulsed 10 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal ...


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