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IPP023N04N

Part Number	IPP023N04N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·En...
Datasheet	IPP023N04N PDF File

Overview

isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.
3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·For ORing and Uninterruptible Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 167 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER...

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