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IPP048N12N3

INCHANGE
Part Number IPP048N12N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP048N12N3，IIPP048N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.8mΩ ·...
Datasheet PDF File IPP048N12N3 PDF File

IPP048N12N3
IPP048N12N3

Overview
isc N-Channel MOSFET Transistor IPP048N12N3，IIPP048N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.
8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 300 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACT...


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