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IPP50R299CP

INCHANGE
Part Number IPP50R299CP
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP50R299CP，IIPP50R299CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.299Ω...
Datasheet PDF File IPP50R299CP PDF File

IPP50R299CP
IPP50R299CP

Overview
isc N-Channel MOSFET Transistor IPP50R299CP，IIPP50R299CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
299Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 104 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMB...


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