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IPP057N06N3

INCHANGE
Part Number IPP057N06N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP057N06N3， IIPP057N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.7mΩ ...
Datasheet PDF File IPP057N06N3 PDF File

IPP057N06N3
IPP057N06N3

Overview
isc N-Channel MOSFET Transistor IPP057N06N3， IIPP057N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.
7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ideal for high frequency switching ·Optimized technology for DC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 115 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THE...


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