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IPP60R080P7

INCHANGE
Part Number IPP60R080P7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP60R080P7，IIPP60R080P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.08Ω ...
Datasheet PDF File IPP60R080P7 PDF File

IPP60R080P7
IPP60R080P7

Overview
isc N-Channel MOSFET Transistor IPP60R080P7，IIPP60R080P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
08Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 37 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 129 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·T...


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