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IRF40R207

INCHANGE
Part Number IRF40R207
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 11, 2020
Detailed Description isc N-Channel MOSFET Transistor IRF40R207, IIRF40R207 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.1mΩ ·Enh...
Datasheet PDF File IRF40R207 PDF File

IRF40R207
IRF40R207

Overview
isc N-Channel MOSFET Transistor IRF40R207, IIRF40R207 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.
1mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous rectifier applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 337 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case ther...


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