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IRFB61N15D

INCHANGE
Part Number IRFB61N15D
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFB61N15D，IIRFB61N15D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤32mΩ ·En...
Datasheet PDF File IRFB61N15D PDF File

IRFB61N15D
IRFB61N15D

Overview
isc N-Channel MOSFET Transistor IRFB61N15D，IIRFB61N15D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤32mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·Uninterruptible Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 250 PD Total Dissipation @TC=25℃ 330 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
45 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFB61N15D，IIRFB61N15D ELECTRICAL CHARACTERISTICS T...


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