N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor IRFB260N，IIRFB260N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤40mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fully Characterized Avalanche Voltage and Current
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S...
Similar Datasheet
