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IRFB3207ZG

Part Number	IRFB3207ZG
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFB3207ZG，IIRFB3207ZG ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·E...
Datasheet	IRFB3207ZG PDF File

Overview

isc N-Channel MOSFET Transistor IRFB3207ZG，IIRFB3207ZG ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.
1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 670 PD Total Dissipation @TC=25℃ 300 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ...

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