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IRFP3415

Part Number	IRFP3415
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFP3415，IIRFP3415 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤42mΩ ·Enhance...
Datasheet	IRFP3415 PDF File

Overview

isc N-Channel MOSFET Transistor IRFP3415，IIRFP3415 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤42mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 43 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 200 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case the...

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