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IRL520N

Part Number	IRL520N
Manufacturer	INCHANGE
Description	TO-220C N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRL520N，IIRL520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.18Ω ·Enhance...
Datasheet	IRL520N PDF File

Overview

isc N-Channel MOSFET Transistor IRL520N，IIRL520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
18Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 35 PD Total Dissipation @TC=25℃ 48 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERIS...

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