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IRLR3114Z

INCHANGE
Part Number IRLR3114Z
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 13, 2020
Detailed Description isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.9mΩ ·Enha...
Datasheet PDF File IRLR3114Z PDF File

IRLR3114Z
IRLR3114Z

Overview
isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.
9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 500 PD Total Dissipation @TC=25℃ 140 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth...


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