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IRLR8729

Part Number	IRLR8729
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.9mΩ ·Enhanc...
Datasheet	IRLR8729 PDF File

Overview

isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.
9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fully characterized avalanche voltage and current ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 58 IDM Drain Current-Single Pulsed 260 PD Total Dissipation @TC=25℃ 55 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-...

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