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MDF18N50BTH
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.27Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power Supply ·High Current, High Speed Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER ...
INCHANGE
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