N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.2Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±30...
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