N-Channel MOSFET
Description
isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
FIR4N65F
·FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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