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9N80A

INCHANGE
Part Number 9N80A
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 18, 2020
Detailed Description isc N-Channel MOSFET Transistor ·DESCRIPTION ·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input ca...
Datasheet PDF File 9N80A PDF File

9N80A
9N80A

Overview
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input capacitance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A ID(puls) Pulse Drain Current 36 A Ptot Total Dissipation@TC=25℃ 240 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junc...


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