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FCH104N60

INCHANGE
Part Number FCH104N60
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 24, 2020
Detailed Description isc N-Channel MOSFET Transistor FCH104N60 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Stati...
Datasheet PDF File FCH104N60 PDF File

FCH104N60
FCH104N60

Overview
isc N-Channel MOSFET Transistor FCH104N60 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 104mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 37 A IDM Drain Current-Single Pulsed 111 A PD Total Dissipation 357 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS...


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