DatasheetsPDF.com

FDP036N10A

INCHANGE
Part Number FDP036N10A
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 27, 2020
Detailed Description isc N-Channel MOSFET Transistor FDP036N10A ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Stat...
Datasheet PDF File FDP036N10A PDF File

FDP036N10A
FDP036N10A

Overview
isc N-Channel MOSFET Transistor FDP036N10A ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 3.
6mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 214 A IDM Drain Current-Single Pulsed 856 A PD Total Dissipation 333 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTI...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)