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FDP3672

Part Number	FDP3672
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 27, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 105V ·Static drain-sou...
Datasheet	FDP3672 PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 105V ·Static drain-source on-resistance: RDS(on) ≤ 33mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 105 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 41 A PD Total Dissipation 135 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal...

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