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FDPF39N20

INCHANGE
Part Number FDPF39N20
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 27, 2020
Detailed Description isc N-Channel MOSFET Transistor FDPF39N20 ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 200V ·Stat...
Datasheet PDF File FDPF39N20 PDF File

FDPF39N20
FDPF39N20

Overview
isc N-Channel MOSFET Transistor FDPF39N20 ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 200V ·Static drain-source on-resistance: RDS(on) ≤ 66mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 39 A IDM Drain Current-Single Pulsed 156 A PD Total Dissipation 37 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 3.
4 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FDPF39N20 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP ...


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