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FQPF7N80C

INCHANGE
Part Number FQPF7N80C
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 27, 2020
Detailed Description isc N-Channel MOSFET Transistor FQPF7N80C ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 1.9Ω@10V ·Fast Switching S...
Datasheet PDF File FQPF7N80C PDF File

FQPF7N80C
FQPF7N80C

Overview
isc N-Channel MOSFET Transistor FQPF7N80C ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 1.
9Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High efficiency switch mode power supplies.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 6.
6 IDM Drain Current-Single Pulsed 26.
4 PD Total Dissipation @TC=25℃ 56 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Juction-to-case t...


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