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IPA037N08N3
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPA037N08N3,IIPA037N08N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T...
INCHANGE
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