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IPA60R180C7

INCHANGE
Part Number IPA60R180C7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 28, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R180C7 ·FEATURES ·With TO-220F package ·Low input capacita...
Datasheet PDF File IPA60R180C7 PDF File

IPA60R180C7
IPA60R180C7

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R180C7 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 9 5 45 PD Total Dissipation @TC=25℃ 29 Tj Max.
Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 ...


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