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IRF840S

Part Number	IRF840S
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 29, 2020
Detailed Description	isc N-Channel Mosfet Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance :...
Datasheet	IRF840S PDF File

Overview

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
85Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 125 W Tj Max.
Operating Junction Tempe...

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