DatasheetsPDF.com

IRF3415L

INCHANGE
Part Number IRF3415L
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 29, 2020
Detailed Description Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input r...
Datasheet PDF File IRF3415L PDF File

IRF3415L
IRF3415L

Overview
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 43 30 A IDM Drain Current-Single Pulsed 150 A PD Total Dissipation @TC=25℃ 200 W Tch Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
75 UNIT ℃/W IRF3415L isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IRF3415L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Sour...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)